10 GHz MONOLITHIC FILTER BASED ON STRIPLINE RESONATORS WITH SPLIT CONDUCTOR

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Abstract

The monolithic design of the compact bandpass filter X-band is made on technology of multilayered printed circuit boards. A quarter-wave stripline resonators of the filter have two conductors divided by the layer prepreg having low parameters which is bonding together a design. This eliminates influence of prepreg on the characteristics of the devices, ensuring good repeatability of filters in mass production. For increase the high-frequency stopband of filter, one of the conductors of each resonator is cut in half by a transverse slit. The constructive sizes of the device were obtained by parametric synthesis using the electrodynamic analysis of its 3D model. The experimental data of five-order filter are in good agreement with the electromagnetic simulation of filters 3D model. An experimental device has a central frequency of the passband of 10 GHz and fractional bandwidth of 5.7%, its dimensions and weight are 18.0 × 5.4 × 2.1 mm and 0.5 g. The important advantage of the developed design is the possibility of its installation on the board using the surface mounting method.

About the authors

I. V. Govorun

Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology

Email: belyaev@iph.krasn.ru
Russia, Krasnoyarsk; Russia, Krasnoyarsk

B. A. Belyaev

Siberian State University of Science and Technology; Siberian Federal University

Author for correspondence.
Email: belyaev@iph.krasn.ru
Russia, Krasnoyarsk; Russia, Krasnoyarsk

Ya. B. Zav’yalov

Siberian Federal University

Email: belyaev@iph.krasn.ru
Russia, Krasnoyarsk

T. Y. Shumilov

Siberian Federal University

Email: belyaev@iph.krasn.ru
Russia, Krasnoyarsk

A. O. Afonin

Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences

Email: belyaev@iph.krasn.ru
Russia, Krasnoyarsk

A. V. Ugryumov

Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences

Email: belyaev@iph.krasn.ru
Russia, Krasnoyarsk

R. G. Galeev

Siberian State University of Science and Technology

Email: belyaev@iph.krasn.ru
Russia, Krasnoyarsk

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Copyright (c) 2023 И.В. Говорун, Б.А. Беляев, Я.Б. Завьялов, Т.Ю. Шумилов, А.О. Афонин, А.В. Угрюмов, Р.Г. Галеев